JAN2N6032
TRANS NPN 90V 50A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JAN2N6032 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/528, features a 90V collector-emitter breakdown voltage and a maximum continuous collector current of 50A. With a power dissipation rating of 140W and a DC current gain (hFE) of 10 minimum at 50A and 2.6V, it provides robust performance in harsh environments. The JAN2N6032 is housed in a TO-204AA (TO-3) through-hole package, facilitating ease of mounting. Its operational temperature range spans from -65°C to 200°C, making it suitable for use in aerospace, defense, and industrial power switching applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TA) |
| Current - Collector Cutoff (Max) | 25mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 10 @ 50A, 2.6V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
| Power - Max | 140 W |
| Qualification | MIL-PRF-19500/528 |