JAN2N5685
TRANS NPN 60V 50A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N5685 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a maximum power dissipation of 300W. The JAN2N5685 offers a minimum DC current gain (hFE) of 15 at 25A and 2V, and a Vce(sat) of 5V at 10A and 50A. It is qualified to MIL-PRF-19500/464, indicating its suitability for military and high-reliability environments. Packaged in a TO-3 (TO-204AA) through-hole format, this transistor operates across an extended temperature range of -55°C to 200°C. Applications include power switching, linear regulation, and audio amplification in industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 10A, 50A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 25A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 300 W |
| Qualification | MIL-PRF-19500/464 |