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JAN2N5685

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JAN2N5685

TRANS NPN 60V 50A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N5685 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a 60V collector-emitter breakdown voltage and a continuous collector current capability of 50A, with a maximum power dissipation of 300W. The JAN2N5685 offers a minimum DC current gain (hFE) of 15 at 25A and 2V, and a Vce(sat) of 5V at 10A and 50A. It is qualified to MIL-PRF-19500/464, indicating its suitability for military and high-reliability environments. Packaged in a TO-3 (TO-204AA) through-hole format, this transistor operates across an extended temperature range of -55°C to 200°C. Applications include power switching, linear regulation, and audio amplification in industrial and defense sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic5V @ 10A, 50A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 25A, 2V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
GradeMilitary
Current - Collector (Ic) (Max)50 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max300 W
QualificationMIL-PRF-19500/464

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