JAN2N5679
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N5679 is a high-reliability PNP bipolar junction transistor (BJT) designed for demanding applications. This power transistor features a 100V collector-emitter breakdown voltage and a maximum collector current of 1A, with a power dissipation of 1W. The transistor exhibits a minimum DC current gain (hFE) of 40 at 250mA and 2V. Its saturation voltage (Vce Sat) is a maximum of 1V at 50mA base current and 500mA collector current. The JAN2N5679 is packaged in a TO-39 (TO-205AD) metal can with a through-hole mounting type. It operates across a wide temperature range of -65°C to 200°C. This component is suitable for use in industrial, defense, and aerospace sectors requiring robust performance and reliability.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 250mA, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1 W |