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JAN2N5679

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JAN2N5679

POWER BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N5679 is a high-reliability PNP bipolar junction transistor (BJT) designed for demanding applications. This power transistor features a 100V collector-emitter breakdown voltage and a maximum collector current of 1A, with a power dissipation of 1W. The transistor exhibits a minimum DC current gain (hFE) of 40 at 250mA and 2V. Its saturation voltage (Vce Sat) is a maximum of 1V at 50mA base current and 500mA collector current. The JAN2N5679 is packaged in a TO-39 (TO-205AD) metal can with a through-hole mounting type. It operates across a wide temperature range of -65°C to 200°C. This component is suitable for use in industrial, defense, and aerospace sectors requiring robust performance and reliability.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 250mA, 2V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1 W

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