JAN2N5672
TRANS NPN 120V 30A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N5672 is a high-power NPN bipolar junction transistor designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/488, features a collector-emitter breakdown voltage of 120V and a continuous collector current capability of up to 30A. With a maximum power dissipation of 6W and a specified Vce(sat) of 5V at 6A/30A, it provides robust performance in power switching and amplification circuits. The device exhibits a minimum DC current gain (hFE) of 20 at 20A/5V. Encased in a TO-3 (TO-204AA) package for through-hole mounting, the JAN2N5672 operates across a wide temperature range of -65°C to 200°C. This transistor is commonly utilized in industrial power supplies, automotive systems, and aerospace and defense electronics.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 6A, 30A |
| Current - Collector Cutoff (Max) | 10mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 120 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/488 |