JAN2N5671
TRANS NPN 90V 30A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology presents the JAN2N5671, a military-grade NPN bipolar junction transistor (BJT) housed in a TO-3 (TO-204AA) package. This through-hole component is rated for a collector-emitter breakdown voltage of 90V and a continuous collector current of up to 30A. With a maximum power dissipation of 6W and a saturation voltage of 5V at 6A/30A, it offers robust performance characteristics. The JAN2N5671 exhibits a minimum DC current gain (hFE) of 20 at 20A/5V and a collector cutoff current of 10mA. This device is qualified under MIL-PRF-19500/488, making it suitable for demanding applications in aerospace and defense sectors. It operates across a temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 6A, 30A |
| Current - Collector Cutoff (Max) | 10mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 20A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/488 |