JAN2N5665
TRANS NPN 300V 5A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N5665 is an NPN bipolar junction transistor designed for high-voltage, high-current applications. This military-grade component, qualified to MIL-PRF-19500/455, features a 300V collector-emitter breakdown voltage and a maximum collector current of 5A. With a minimum DC current gain (hFE) of 25 at 1A and 5V, and a power dissipation of 2.5W, it is suitable for demanding environments. The transistor exhibits a Vce saturation of 1V at 1A/5A and a collector cutoff current of 200nA. Packaged in a TO-66 (TO-213AA) through-hole configuration, it operates across a temperature range of -65°C to 200°C. This component is utilized in aerospace, defense, and industrial sectors requiring robust power switching and amplification.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2.5 W |
| Qualification | MIL-PRF-19500/455 |