JAN2N5664P
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N5664P is a high-performance NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a 200V collector-emitter breakdown voltage and a continuous collector current capability of 5A, with a maximum power dissipation of 2.5W. It is housed in a robust TO-66 (TO-213AA) through-hole package suitable for reliable thermal management. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 1A and 5V, and a saturation voltage (Vce Sat) of 400mV at 3A collector current driven by 300mA base current. The JAN2N5664P meets MIL-PRF-19500/455 qualification, indicating its suitability for military and high-reliability industrial environments. Typical applications include power switching and amplification circuits in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 300mA, 3A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 2.5 W |
| Qualification | MIL-PRF-19500/455 |
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