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JAN2N5664

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JAN2N5664

TRANS NPN 200V 5A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N5664 is an NPN bipolar junction transistor designed for demanding applications. This component features a 200V collector-emitter breakdown voltage and a maximum collector current of 5A, with a power dissipation of 2.5W. It offers a minimum DC current gain (hFE) of 40 at 1A collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 1V maximum at 1A collector current and 5A collector current. Rated for military applications, it meets the MIL-PRF-19500/455 qualification. The JAN2N5664 is packaged in a TO-66 (TO-213AA) through-hole configuration and operates within an extended temperature range of -65°C to 200°C. This device is suitable for use in high-reliability systems across various industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 1A, 5A
Current - Collector Cutoff (Max)200nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 1A, 5V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max2.5 W
QualificationMIL-PRF-19500/455

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