JAN2N5664
TRANS NPN 200V 5A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N5664 is an NPN bipolar junction transistor designed for demanding applications. This component features a 200V collector-emitter breakdown voltage and a maximum collector current of 5A, with a power dissipation of 2.5W. It offers a minimum DC current gain (hFE) of 40 at 1A collector current and 5V collector-emitter voltage. The transistor exhibits a Vce(sat) of 1V maximum at 1A collector current and 5A collector current. Rated for military applications, it meets the MIL-PRF-19500/455 qualification. The JAN2N5664 is packaged in a TO-66 (TO-213AA) through-hole configuration and operates within an extended temperature range of -65°C to 200°C. This device is suitable for use in high-reliability systems across various industrial sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1A, 5A |
| Current - Collector Cutoff (Max) | 200nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 1A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 2.5 W |
| Qualification | MIL-PRF-19500/455 |
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