JAN2N5416S
TRANS PNP 300V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JAN2N5416S is a high-reliability PNP bipolar junction transistor designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/485, features a 300V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 750mW, it is housed in a TO-39 (TO-205AD) metal can package suitable for through-hole mounting. Key electrical characteristics include a minimum DC current gain (hFE) of 30 at 50mA and 10V, and a saturation voltage (Vce(sat)) of 2V at 5mA and 50mA. The JAN2N5416S operates within an extended temperature range of -65°C to 200°C. This transistor is commonly utilized in defense, aerospace, and industrial applications requiring robust performance and stringent reliability standards.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 750 mW |
| Qualification | MIL-PRF-19500/485 |
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