JAN2N5415
TRANS PNP 200V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N5415 is a military-grade PNP bipolar junction transistor. This through-hole component features a maximum collector current of 1 A and a collector-emitter breakdown voltage of 200 V. The device offers a minimum DC current gain (hFE) of 30 at 50 mA and 10 V. With a maximum power dissipation of 750 mW, it is packaged in a TO-5 metal can (TO-205AA). The JAN2N5415 meets MIL-PRF-19500/485 qualification standards, ensuring suitability for demanding applications in aerospace and defense sectors. Its operating temperature range is from -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 50mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 750 mW |
| Qualification | MIL-PRF-19500/485 |