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JAN2N5302

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JAN2N5302

TRANS NPN 60V 30A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N5302 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This component, housed in a TO-3 (TO-204AA) package, offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 30A. With a power dissipation rating of 5W and a minimum DC current gain (hFE) of 15 at 15A and 2V, it is suitable for demanding switching and amplification tasks. The device operates across a wide temperature range from -65°C to 200°C. Qualification under MIL-PRF-19500/456 indicates suitability for military and high-reliability industrial applications, including power supplies and motor control systems. The saturation voltage at 6A base current and 30A collector current is 3V.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic3V @ 6A, 30A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 15A, 2V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
GradeMilitary
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max5 W
QualificationMIL-PRF-19500/456

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