JAN2N5038
TRANS NPN 90V 20A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N5038 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/439, features a 90V collector-emitter breakdown voltage and a maximum continuous collector current of 20A. With a power dissipation capability of 140W and a low saturation voltage of 1V at 1.2A base current and 12A collector current, it is well-suited for power switching and amplification in industrial, aerospace, and defense systems. The device exhibits a minimum DC current gain (hFE) of 50 at 2A collector current and 5V collector-emitter voltage. Encased in a TO-3 (TO-204AA) package, the JAN2N5038 is suitable for through-hole mounting and operates across a wide temperature range of -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 1.2A, 12A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 2A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
| Power - Max | 140 W |
| Qualification | MIL-PRF-19500/439 |