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JAN2N4399

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JAN2N4399

TRANS PNP 60V 30A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N4399 is a PNP Bipolar Junction Transistor (BJT) designed for high-power switching and amplification applications. This military-grade component, qualified under MIL-PRF-19500/433, features a 60V collector-emitter breakdown voltage and a maximum collector current of 30A. With a substantial 5W power dissipation and a wide operating temperature range of -55°C to 200°C, it is suitable for demanding environments. The transistor exhibits a minimum DC current gain (hFE) of 15 at 15A and 2V, and a saturation voltage (Vce Sat) of 750mV at 1A base current and 10A collector current. Packaged in a TO-3 (TO-204AA) through-hole configuration, the JAN2N4399 is commonly utilized in power supply regulation, motor control, and high-current switching circuits across industrial and defense sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic750mV @ 1A, 10A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 15A, 2V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
GradeMilitary
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max5 W
QualificationMIL-PRF-19500/433

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