JAN2N4399
TRANS PNP 60V 30A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N4399 is a PNP Bipolar Junction Transistor (BJT) designed for high-power switching and amplification applications. This military-grade component, qualified under MIL-PRF-19500/433, features a 60V collector-emitter breakdown voltage and a maximum collector current of 30A. With a substantial 5W power dissipation and a wide operating temperature range of -55°C to 200°C, it is suitable for demanding environments. The transistor exhibits a minimum DC current gain (hFE) of 15 at 15A and 2V, and a saturation voltage (Vce Sat) of 750mV at 1A base current and 10A collector current. Packaged in a TO-3 (TO-204AA) through-hole configuration, the JAN2N4399 is commonly utilized in power supply regulation, motor control, and high-current switching circuits across industrial and defense sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 1A, 10A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 15A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 5 W |
| Qualification | MIL-PRF-19500/433 |