JAN2N4236L
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N4236L is a PNP bipolar junction transistor (BJT) designed for demanding applications requiring high reliability. This component, qualified to MIL-PRF-19500/580, is housed in a TO-39 (TO-205AD) metal can package for through-hole mounting. It offers a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 1A, with a power dissipation rating of 1W. Key electrical characteristics include a minimum DC current gain (hFE) of 40 at 100mA and 1V, and a Vce(sat) of 600mV at 100mA and 1A. The operating temperature range extends from -65°C to 200°C. This robust transistor finds application in military and aerospace systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/580 |
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