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JAN2N4236

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JAN2N4236

TRANS PNP 80V 1A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N4236 is a PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage of 80V and a maximum collector current of 1A. With a power dissipation rating of 1W and a minimum DC current gain (hFE) of 30 at 250mA and 1V, it offers robust performance. The transistor operates across a wide temperature range from -65°C to 200°C, suitable for military-grade specifications under MIL-PRF-19500/580. The TO-39 (TO-205AD) metal can package facilitates through-hole mounting. This device is commonly utilized in power switching and amplification circuits within aerospace, defense, and industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 250mA, 1V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1 W
QualificationMIL-PRF-19500/580

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