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JAN2N4235

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JAN2N4235

TRANS PNP 60V 1A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N4235 is a military-grade PNP bipolar junction transistor (BJT) designed for high-reliability applications. This device features a collector-emitter breakdown voltage (Vce) of 60V and a maximum continuous collector current (Ic) of 1A. The transistor offers a minimum DC current gain (hFE) of 40 at 100mA and 1V. Power dissipation is rated at 1W, with a Vce(sat) of 600mV at 100mA and 1A. The JAN2N4235 is packaged in a TO-39 (TO-205AD) hermetically sealed metal can, suitable for through-hole mounting. Operating temperature range is specified from -65°C to 200°C (TJ). This component meets MIL-PRF-19500/580 qualification standards, making it suitable for demanding aerospace and defense systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 100mA, 1A
Current - Collector Cutoff (Max)1mA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 100mA, 1V
Frequency - Transition-
Supplier Device PackageTO-39
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max1 W
QualificationMIL-PRF-19500/580

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