JAN2N4235
TRANS PNP 60V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N4235 is a military-grade PNP bipolar junction transistor (BJT) designed for high-reliability applications. This device features a collector-emitter breakdown voltage (Vce) of 60V and a maximum continuous collector current (Ic) of 1A. The transistor offers a minimum DC current gain (hFE) of 40 at 100mA and 1V. Power dissipation is rated at 1W, with a Vce(sat) of 600mV at 100mA and 1A. The JAN2N4235 is packaged in a TO-39 (TO-205AD) hermetically sealed metal can, suitable for through-hole mounting. Operating temperature range is specified from -65°C to 200°C (TJ). This component meets MIL-PRF-19500/580 qualification standards, making it suitable for demanding aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 100mA, 1V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/580 |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2C3999
POWER BJT
JANTXV2N3501UB
TRANS NPN 150V 0.3A UB
