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JAN2N4033UB/TR

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JAN2N4033UB/TR

SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JAN2N4033UB-TR is a military-grade PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 1A. With a maximum power dissipation of 500mW and a transition frequency not specified, it is suitable for general-purpose amplification and switching in demanding environments. The JAN2N4033UB-TR meets MIL-PRF-19500/512 qualification standards, ensuring reliability. It operates within an extended temperature range of -65°C to 200°C (TJ) and is supplied in a UB package, presented in Tape & Reel (TR) for automated assembly. Key parameters include a minimum DC current gain (hFE) of 100 at 100mA and 5V, and a Vce(sat) of 1V at 100mA and 1A. The collector cutoff current is a maximum of 25nA. This device finds application in aerospace, defense, and industrial systems requiring robust performance.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)25nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max500 mW
QualificationMIL-PRF-19500/512

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