JAN2N4033UB/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JAN2N4033UB-TR is a military-grade PNP bipolar junction transistor (BJT) designed for surface mount applications. This component offers a collector-emitter breakdown voltage of 80V and a continuous collector current capability of up to 1A. With a maximum power dissipation of 500mW and a transition frequency not specified, it is suitable for general-purpose amplification and switching in demanding environments. The JAN2N4033UB-TR meets MIL-PRF-19500/512 qualification standards, ensuring reliability. It operates within an extended temperature range of -65°C to 200°C (TJ) and is supplied in a UB package, presented in Tape & Reel (TR) for automated assembly. Key parameters include a minimum DC current gain (hFE) of 100 at 100mA and 5V, and a Vce(sat) of 1V at 100mA and 1A. The collector cutoff current is a maximum of 25nA. This device finds application in aerospace, defense, and industrial systems requiring robust performance.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 25nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/512 |
Request a Quote
Clients Also Buy
JANTX2N2219A
TRANS NPN 50V 0.8A TO39
2N5632
POWER BJT
MVR2N2222AUBC/TR
RH SMALL-SIGNAL BJT
