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JAN2N4033UA/TR

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JAN2N4033UA/TR

SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JAN2N4033UA-TR is a PNP bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified under MIL-PRF-19500/512, features a 4-SMD, No Lead (UA) package for surface mount installation. It offers a maximum collector current of 1 A and a collector-emitter breakdown voltage of 80 V. The device exhibits a minimum DC current gain (hFE) of 100 at 100 mA and 5 V. With a maximum power dissipation of 500 mW and an operating temperature range of -65°C to 200°C, the JAN2N4033UA-TR is suitable for use in aerospace and defense systems. The component is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 100mA, 1A
Current - Collector Cutoff (Max)25nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 100mA, 5V
Frequency - Transition-
Supplier Device PackageUA
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max500 mW
QualificationMIL-PRF-19500/512

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