JAN2N4029
TRANS PNP 80V 1A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JAN2N4029 is a military-grade PNP bipolar junction transistor designed for demanding applications. This component, qualified under MIL-PRF-19500/512, features a 80V collector-emitter breakdown voltage (Vceo) and a maximum collector current (Ic) of 1A. With a minimum DC current gain (hFE) of 100 at 100mA and 5V, it offers robust amplification characteristics. The transistor dissipates a maximum power of 500mW and has a Vce(sat) of 1V at 100mA, 1A. Operating across a wide temperature range of -55°C to 200°C, the JAN2N4029 is packaged in a TO-18 (TO-206AA) metal can, suitable for through-hole mounting. This device finds utility in various high-reliability electronic systems, including aerospace and defense.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 100mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 (TO-206AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/512 |