JAN2N3879
TRANS NPN 75V 7A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N3879 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a 75V collector-emitter breakdown voltage (Vce) and can handle a continuous collector current (Ic) of up to 7A. With a maximum power dissipation of 35W and a low saturation voltage of 1.2V at 4A collector current, it is suitable for power switching and amplification tasks. The JAN2N3879 boasts a minimum DC current gain (hFE) of 20 at 4A, 4A, and 5V. Its TO-66 (TO-213AA) package facilitates through-hole mounting. Qualified to MIL-PRF-19500/526 and operating across a wide temperature range of -65°C to 200°C, this military-grade component is commonly employed in aerospace, defense, and industrial control systems requiring robust performance and extended operational life.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.2V @ 400mA, 4A |
| Current - Collector Cutoff (Max) | 25mA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 7 A |
| Voltage - Collector Emitter Breakdown (Max) | 75 V |
| Power - Max | 35 W |
| Qualification | MIL-PRF-19500/526 |
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