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JAN2N3879

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JAN2N3879

TRANS NPN 75V 7A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N3879 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This device features a 75V collector-emitter breakdown voltage (Vce) and can handle a continuous collector current (Ic) of up to 7A. With a maximum power dissipation of 35W and a low saturation voltage of 1.2V at 4A collector current, it is suitable for power switching and amplification tasks. The JAN2N3879 boasts a minimum DC current gain (hFE) of 20 at 4A, 4A, and 5V. Its TO-66 (TO-213AA) package facilitates through-hole mounting. Qualified to MIL-PRF-19500/526 and operating across a wide temperature range of -65°C to 200°C, this military-grade component is commonly employed in aerospace, defense, and industrial control systems requiring robust performance and extended operational life.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 400mA, 4A
Current - Collector Cutoff (Max)25mA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 4A, 5V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)7 A
Voltage - Collector Emitter Breakdown (Max)75 V
Power - Max35 W
QualificationMIL-PRF-19500/526

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