JAN2N3868
TRANS PNP 60V 0.003A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N3868 is a high-reliability PNP bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-PRF-19500/350, features a 60V collector-emitter breakdown voltage and a maximum collector current of 3mA. It offers a minimum DC current gain (hFE) of 30 at 1.5A and 2V, with a Vce(sat) of 1.5V at 250mA and 2.5A. The transistor dissipates up to 1W of power and operates within an extended temperature range of -65°C to 200°C. Packaged in a TO-5 metal can (TO-205AA) for through-hole mounting, the JAN2N3868 is suitable for use in aerospace, defense, and industrial systems requiring robust performance and extended operational life.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | 100µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 1.5A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 3 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 1 W |
| Qualification | MIL-PRF-19500/350 |
Request a Quote
Clients Also Buy
JAN2N5339U3
TRANS NPN 100V 5A U-3
JAN2N3735
TRANS NPN 40V 1.5A TO39
2N5729
POWER BJT
