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JAN2N3792

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JAN2N3792

TRANS PNP 80V 10A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N3792 is a PNP bipolar junction transistor designed for demanding applications. This military-grade component features a 80 V collector-emitter breakdown voltage and a maximum continuous collector current of 10 A, with a power dissipation of 5 W. It offers a minimum DC current gain (hFE) of 30 at 3 A and 2 V. The transistor exhibits a Vce saturation of 2.5 V maximum at 2 A base current and 10 A collector current. Packaged in a TO-3 (TO-204AA) metal can for robust thermal performance, the JAN2N3792 is suitable for high-power switching and amplification circuits. Its qualification under MIL-PRF-19500/379 ensures reliability in harsh environments, making it a choice for aerospace, defense, and industrial power control systems. Operating temperature range is -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-3
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 2A, 10A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 3A, 2V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
GradeMilitary
Current - Collector (Ic) (Max)10 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max5 W
QualificationMIL-PRF-19500/379

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