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JAN2N3772

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JAN2N3772

TRANS NPN 60V 20A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N3772 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, compliant with MIL-PRF-19500/518, features a 60V collector-emitter breakdown voltage and a continuous collector current capability of up to 20A. With a maximum power dissipation of 6W, it is suitable for power switching and amplification in industrial, defense, and aerospace sectors. The JAN2N3772 offers a minimum DC current gain (hFE) of 15 at 10A and 4V, and a saturation voltage (Vce Sat) of 4V at 4A collector current. Packaged in a TO-204AA (TO-3) case for through-hole mounting, it operates across a wide temperature range from -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic4V @ 4A, 20A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 10A, 4V
Frequency - Transition-
Supplier Device PackageTO-3 (TO-204AA)
GradeMilitary
Current - Collector (Ic) (Max)20 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max6 W
QualificationMIL-PRF-19500/518

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