JAN2N3772
TRANS NPN 60V 20A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N3772 is a high-power NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, compliant with MIL-PRF-19500/518, features a 60V collector-emitter breakdown voltage and a continuous collector current capability of up to 20A. With a maximum power dissipation of 6W, it is suitable for power switching and amplification in industrial, defense, and aerospace sectors. The JAN2N3772 offers a minimum DC current gain (hFE) of 15 at 10A and 4V, and a saturation voltage (Vce Sat) of 4V at 4A collector current. Packaged in a TO-204AA (TO-3) case for through-hole mounting, it operates across a wide temperature range from -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 4A, 20A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 10A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 20 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/518 |