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JAN2N3771

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JAN2N3771

TRANS NPN 40V 30A TO3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology's JAN2N3771 is a high-power NPN bipolar junction transistor (BJT) designed for robust performance. This device offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 30A, with a collector current cutoff at a maximum of 5mA. Featuring a minimum DC current gain (hFE) of 15 at 15A and 4V, the JAN2N3771 handles significant power dissipation with a maximum rating of 6W. It is packaged in a TO-3 (TO-204AA) through-hole configuration, suitable for demanding thermal management. The JAN2N3771 meets MIL-PRF-19500/518 qualification, indicating its suitability for military applications, and operates across a wide temperature range of -65°C to 200°C. Its specifications make it a reliable choice for power switching and amplification circuits in aerospace, defense, and industrial power control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-204AA, TO-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic4V @ 6A, 30A
Current - Collector Cutoff (Max)5mA
DC Current Gain (hFE) (Min) @ Ic, Vce15 @ 15A, 4V
Frequency - Transition-
Supplier Device PackageTO-3
GradeMilitary
Current - Collector (Ic) (Max)30 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max6 W
QualificationMIL-PRF-19500/518

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