JAN2N3771
TRANS NPN 40V 30A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JAN2N3771 is a high-power NPN bipolar junction transistor (BJT) designed for robust performance. This device offers a collector-emitter breakdown voltage of 40V and a continuous collector current capability of up to 30A, with a collector current cutoff at a maximum of 5mA. Featuring a minimum DC current gain (hFE) of 15 at 15A and 4V, the JAN2N3771 handles significant power dissipation with a maximum rating of 6W. It is packaged in a TO-3 (TO-204AA) through-hole configuration, suitable for demanding thermal management. The JAN2N3771 meets MIL-PRF-19500/518 qualification, indicating its suitability for military applications, and operates across a wide temperature range of -65°C to 200°C. Its specifications make it a reliable choice for power switching and amplification circuits in aerospace, defense, and industrial power control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 4V @ 6A, 30A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 15 @ 15A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 30 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/518 |
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