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JAN2N3767

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JAN2N3767

TRANS NPN 80V 4A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N3767 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This component features a 80V collector-emitter breakdown voltage and a continuous collector current capability of 4A. With a maximum power dissipation of 25W and a saturation voltage of 2.5V at 1A collector current, it is suitable for power switching and amplification. The device offers a minimum DC current gain (hFE) of 40 at 500mA collector current. Packaged in a TO-66 (TO-213AA) through-hole configuration, the JAN2N3767 operates across a wide temperature range of -65°C to 200°C. This JAN-qualified device, meeting MIL-PRF-19500/518 specifications, finds application in military and industrial sectors requiring robust performance.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic2.5V @ 100mA, 1A
Current - Collector Cutoff (Max)500µA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 500mA, 5V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max25 W
QualificationMIL-PRF-19500/518

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