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JAN2N3741

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JAN2N3741

TRANS PNP 80V 4A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N3741 is a military-grade PNP bipolar junction transistor (BJT) housed in a reliable TO-66 (TO-213AA) package. This through-hole device is rated for a maximum collector current of 4A and a collector-emitter breakdown voltage of 80V. It offers a maximum power dissipation of 25W and a minimum DC current gain (hFE) of 30 at 250mA and 1V. The saturation voltage (Vce Sat) is specified at a maximum of 600mV with a base current of 125mA and collector current of 1A. This component is qualified to MIL-PRF-19500/441, making it suitable for demanding applications in aerospace and defense sectors. It operates across a wide temperature range from -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 125mA, 1A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 250mA, 1V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max25 W
QualificationMIL-PRF-19500/441

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