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JAN2N3740

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JAN2N3740

TRANS PNP 60V 4A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N3740 is a high-reliability PNP bipolar junction transistor designed for demanding applications. This hermetically sealed TO-66 (TO-213AA) packaged device offers a continuous collector current capability of 4A and a maximum collector-emitter breakdown voltage of 60V. With a power dissipation rating of 25W and a wide operating temperature range from -65°C to 200°C, it is suitable for military and aerospace environments. The JAN2N3740 features a minimum DC current gain (hFE) of 30 at 250mA and 1V, and a saturation voltage (Vce(sat)) of 600mV at 1A collector current driven by 125mA base current. This component meets MIL-PRF-19500/441 qualification, ensuring robust performance and reliability.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 125mA, 1A
Current - Collector Cutoff (Max)10µA
DC Current Gain (hFE) (Min) @ Ic, Vce30 @ 250mA, 1V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)4 A
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max25 W
QualificationMIL-PRF-19500/441

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