JAN2N3737
TRANS NPN 40V 1.5A TO46-3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N3737 is an NPN bipolar junction transistor (BJT) designed for high-reliability applications. This military-grade component operates with a collector-emitter breakdown voltage of 40V and a maximum continuous collector current of 1.5A. It features a minimum DC current gain (hFE) of 20 at 1A collector current and 1.5V Vce. The transistor has a saturation voltage (Vce(sat)) of 900mV at 100mA base current and 1A collector current. With a maximum power dissipation of 500mW, it is housed in a TO-46-3 (TO-206AB) metal can package for through-hole mounting. The JAN2N3737 is qualified to MIL-PRF-19500/395 and is suitable for operation across a wide temperature range of -65°C to 200°C. This device is commonly found in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 900mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) | 10µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 1A, 1.5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/395 |