JAN2N3716
TRANS NPN 80V 10A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N3716 is an NPN bipolar junction transistor (BJT) designed for high-power applications. This through-hole device features a collector-emitter breakdown voltage of 80V and a maximum continuous collector current of 10A. With a minimum DC current gain (hFE) of 30 at 3A and 2V, and a saturation voltage (Vce(sat)) of 2.5V at 10A collector current and 2A base current, it offers robust performance. The JAN2N3716 is rated for 5W power dissipation and operates across a wide temperature range of -65°C to 200°C. Its TO-3 (TO-204AA) package is suitable for demanding thermal environments. This component adheres to MIL-PRF-19500/408 qualification, indicating its suitability for military and high-reliability applications, including power switching and amplification circuits in aerospace, defense, and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2.5V @ 2A, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3A, 2V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 5 W |
| Qualification | MIL-PRF-19500/408 |