JAN2N3700UB/TR
TRANS NPN 80V 1A 3UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N3700UB-TR is a military-grade NPN bipolar junction transistor. This device features a collector-emitter breakdown voltage of 80 V and a continuous collector current of 1 A, with a maximum collector current of 1 A. The DC current gain (hFE) is a minimum of 50 at 500 mA collector current and 10 V collector-emitter voltage. Power dissipation is rated at 500 mW. The transistor is packaged in a 3-SMD, No Lead UB package on tape and reel (TR). Key parameters include a Vce(sat) of 500 mV at 50 mA base current and 500 mA collector current, and a collector cutoff current (Icbo) of 10 nA. The operating temperature range is -65°C to 200°C. This component meets MIL-PRF-19500/391 qualification standards. Applications include power switching and general-purpose amplification in demanding environments.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |