JAN2N3700UB
TRANS NPN 80V 1A 3UBManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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The Microchip Technology JAN2N3700UB is an NPN bipolar junction transistor designed for high-reliability applications. This hermetically sealed component offers a collector current capability of 1 A and a collector-emitter breakdown voltage of 80 V. It features a maximum power dissipation of 500 mW and a saturation voltage (Vce(sat)) of 500 mV at 50 mA base current and 500 mA collector current. The minimum DC current gain (hFE) is specified at 50 for an Ic of 500 mA and Vce of 10 V. Operating across a wide temperature range of -65°C to 200°C, this transistor is qualified to MIL-PRF-19500/391, making it suitable for demanding environments in aerospace, defense, and industrial control systems. The UB package is a 3-lead surface mount configuration.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |
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