JAN2N3585
TRANS NPN 300V 2A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N3585 is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-66 (TO-213AA) package. This through-hole component is rated for a collector-emitter breakdown voltage of 300V and a continuous collector current of up to 2A. It offers a guaranteed minimum DC current gain (hFE) of 25 at 1A collector current and 10V Vce. The saturation voltage (Vce(sat)) is specified at a maximum of 750mV with 125mA base current and 1A collector current. With a maximum power dissipation of 2.5W and an operating temperature range of -65°C to 200°C, this device is suitable for demanding applications. The JAN2N3585 meets MIL-PRF-19500/384 qualification standards, making it a reliable choice for aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 125mA, 1A |
| Current - Collector Cutoff (Max) | 5mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 1A, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 2 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 2.5 W |
| Qualification | MIL-PRF-19500/384 |