JAN2N3442
TRANS NPN 140V 10A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N3442 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This component features a collector-emitter breakdown voltage (Vce) of 140V and a continuous collector current (Ic) capability of 10A. With a maximum power dissipation of 6W and a DC current gain (hFE) of at least 20 at 3A and 4V, the JAN2N3442 offers robust performance. The device is housed in a TO-3 (TO-204AA) through-hole package, suitable for power switching and amplification circuits. Its military-grade qualification (MIL-PRF-19500/370) ensures suitability for aerospace, defense, and other critical industrial systems requiring exceptional reliability and extended operating temperatures from -55°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-204AA, TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 300mA, 3A |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 3A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 10 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/370 |