JAN2N3441
TRANS NPN 140V 3A TO66Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N3441 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a collector-emitter breakdown voltage of 140V and a continuous collector current capability of 3A. It features a maximum power dissipation of 3W and a minimum DC current gain (hFE) of 25 at 500mA collector current and 4V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at 1V maximum for a base current of 50mA and a collector current of 500mA. Operating across a wide temperature range of -65°C to 200°C, this device meets MIL-PRF-19500/369 qualification, indicating its suitability for military and aerospace environments, as well as high-temperature industrial control and power switching circuits.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-213AA, TO-66-2 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 25 @ 500mA, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-66 (TO-213AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 140 V |
| Power - Max | 3 W |
| Qualification | MIL-PRF-19500/369 |