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JAN2N3441

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JAN2N3441

TRANS NPN 140V 3A TO66

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N3441 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This through-hole component, housed in a TO-66 (TO-213AA) package, offers a collector-emitter breakdown voltage of 140V and a continuous collector current capability of 3A. It features a maximum power dissipation of 3W and a minimum DC current gain (hFE) of 25 at 500mA collector current and 4V collector-emitter voltage. The saturation voltage (Vce(sat)) is specified at 1V maximum for a base current of 50mA and a collector current of 500mA. Operating across a wide temperature range of -65°C to 200°C, this device meets MIL-PRF-19500/369 qualification, indicating its suitability for military and aerospace environments, as well as high-temperature industrial control and power switching circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-213AA, TO-66-2
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce25 @ 500mA, 4V
Frequency - Transition-
Supplier Device PackageTO-66 (TO-213AA)
GradeMilitary
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)140 V
Power - Max3 W
QualificationMIL-PRF-19500/369

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