JAN2N3440
TRANS NPN 250V 1A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N3440 is a military-grade NPN bipolar junction transistor (BJT) housed in a TO-39 (TO-205AD) metal can package. This through-hole component offers a collector-emitter breakdown voltage of 250V and a continuous collector current rating of 1A. With a maximum power dissipation of 800mW and a minimum DC current gain (hFE) of 40 at 20mA and 10V, the JAN2N3440 is suitable for applications requiring high voltage and moderate current handling. The device features a low collector cutoff current of 2µA and a saturation voltage (Vce(sat)) of 500mV at 4mA base current and 50mA collector current. Operating temperature range is -65°C to 200°C. This component is qualified to MIL-PRF-19500/368, indicating its suitability for demanding aerospace and defense applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |
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