JAN2N3439L
TRANS NPN 350V 1A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N3439L is a high-voltage NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified under MIL-PRF-19500/368, offers a robust 350V collector-emitter breakdown voltage and a continuous collector current capability of 1A. With a maximum power dissipation of 800mW and a saturation voltage of 500mV at 4mA base current and 50mA collector current, it is suitable for power switching and amplification circuits. The device features a minimum DC current gain (hFE) of 40 at 20mA collector current and 10V collector-emitter voltage. Packaged in a TO-5 metal can (TO-205AA), this through-hole mounted transistor operates across a wide temperature range of -65°C to 200°C. It finds application in aerospace, defense, and industrial sectors requiring reliable high-voltage performance.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 4mA, 50mA |
| Current - Collector Cutoff (Max) | 2µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 20mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 350 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/368 |