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JAN2N3057A

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JAN2N3057A

TRANS NPN 80V 1A TO46-3

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N3057A is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding military applications. This component features a 80V collector-emitter breakdown voltage and a maximum collector current of 1A. The device offers a minimum DC current gain (hFE) of 50 at 500mA and 10V, with a saturation voltage of 500mV at 50mA and 500mA. Rated for 500mW power dissipation, it operates across a wide temperature range of -65°C to 200°C. Packaged in a TO-46-3 (TO-206AB) metal can, the JAN2N3057A is qualified under MIL-PRF-19500/391, ensuring performance in harsh environments. Its characteristics make it suitable for power switching and amplification circuits within military and aerospace systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AB, TO-46-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic500mV @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 500mA, 10V
Frequency - Transition-
Supplier Device PackageTO-46-3
GradeMilitary
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max500 mW
QualificationMIL-PRF-19500/391

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