JAN2N3057A
TRANS NPN 80V 1A TO46-3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N3057A is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding military applications. This component features a 80V collector-emitter breakdown voltage and a maximum collector current of 1A. The device offers a minimum DC current gain (hFE) of 50 at 500mA and 10V, with a saturation voltage of 500mV at 50mA and 500mA. Rated for 500mW power dissipation, it operates across a wide temperature range of -65°C to 200°C. Packaged in a TO-46-3 (TO-206AB) metal can, the JAN2N3057A is qualified under MIL-PRF-19500/391, ensuring performance in harsh environments. Its characteristics make it suitable for power switching and amplification circuits within military and aerospace systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AB, TO-46-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 500mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-46-3 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/391 |