JAN2N3055
TRANS NPN 70V 15A TO3Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology's JAN2N3055 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This component offers a 70V collector-emitter breakdown voltage (Vce) and a continuous collector current (Ic) capability of 15A, with a maximum power dissipation of 6W. The JAN2N3055 features a minimum DC current gain (hFE) of 20 at 4A and 4V, and a saturation voltage (Vce(sat)) of 2V at 10A collector current and 3.3A base current. Packaged in a TO-3 (TO-204AA) metal can, this device is suitable for through-hole mounting and operates across a wide temperature range from -65°C to 200°C. Qualified to MIL-PRF-19500/407, the JAN2N3055 is utilized in military and aerospace, industrial, and high-power switching applications where robust performance and reliability are critical.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 3.3A, 10A |
| Current - Collector Cutoff (Max) | 1mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 4A, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-3 (TO-204AA) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 15 A |
| Voltage - Collector Emitter Breakdown (Max) | 70 V |
| Power - Max | 6 W |
| Qualification | MIL-PRF-19500/407 |