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JAN2N2484UB/TR

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JAN2N2484UB/TR

TRANS NPN 60V 0.05A UB

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N2484UB-TR is a MIL-PRF-19500/376 qualified NPN bipolar junction transistor designed for demanding applications. This military-grade component features a 60V collector-emitter breakdown voltage and a maximum collector current of 50mA. With a power dissipation rating of 360mW, it is suitable for surface mount applications utilizing the UB package. The transistor exhibits a minimum DC current gain (hFE) of 225 at 10mA and 5V, with a Vce saturation of 300mV at 100µA and 1mA. Its low collector cutoff current is rated at 2nA (max). The JAN2N2484UB-TR operates across an extended temperature range of -65°C to 200°C. This component finds utility in aerospace, defense, and high-reliability industrial systems. Packaging is supplied on tape and reel (TR).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)2nA
DC Current Gain (hFE) (Min) @ Ic, Vce225 @ 10mA, 5V
Frequency - Transition-
Supplier Device PackageUB
GradeMilitary
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max360 mW
QualificationMIL-PRF-19500/376

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