JAN2N2484UA/TR
TRANS NPN 60V 0.05A UAManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N2484UA-TR is a military-grade NPN bipolar junction transistor (BJT) designed for demanding applications. This surface mount device, packaged in a 4-SMD, No Lead UA configuration on tape and reel, offers a collector-emitter breakdown voltage of 60V and a maximum collector current of 50mA. It features a low collector cutoff current of 2nA and a minimum DC current gain (hFE) of 225 at 10mA collector current and 5V collector-emitter voltage. The transistor exhibits a Vce saturation of 300mV at 100µA base current and 1mA collector current, with a maximum power dissipation of 360mW. Its qualification under MIL-PRF-19500/376 and wide operating temperature range of -65°C to 200°C make it suitable for aerospace, defense, and high-reliability industrial systems.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 2nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 225 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | UA |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/376 |
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