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JAN2N2484

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JAN2N2484

TRANS NPN 60V 0.05A TO18

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N2484 is an NPN bipolar junction transistor (BJT) designed for demanding applications requiring high reliability. This through-hole component, housed in a TO-18 metal can package (TO-206AA), offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 50mA. It features a maximum power dissipation of 360mW and a low collector cutoff current of 2nA. The DC current gain (hFE) is specified at a minimum of 225 at 10mA collector current and 5V collector-emitter voltage. The device is rated for operation across a wide temperature range of -65°C to 200°C and meets MIL-PRF-19500/376 qualification, making it suitable for military and aerospace systems. Saturation voltage is a maximum of 300mV at 100µA base current and 1mA collector current.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-206AA, TO-18-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic300mV @ 100µA, 1mA
Current - Collector Cutoff (Max)2nA
DC Current Gain (hFE) (Min) @ Ic, Vce225 @ 10mA, 5V
Frequency - Transition-
Supplier Device PackageTO-18
GradeMilitary
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)60 V
Power - Max360 mW
QualificationMIL-PRF-19500/376

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