JAN2N2484
TRANS NPN 60V 0.05A TO18Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N2484 is an NPN bipolar junction transistor (BJT) designed for demanding applications requiring high reliability. This through-hole component, housed in a TO-18 metal can package (TO-206AA), offers a collector-emitter breakdown voltage of 60V and a maximum continuous collector current of 50mA. It features a maximum power dissipation of 360mW and a low collector cutoff current of 2nA. The DC current gain (hFE) is specified at a minimum of 225 at 10mA collector current and 5V collector-emitter voltage. The device is rated for operation across a wide temperature range of -65°C to 200°C and meets MIL-PRF-19500/376 qualification, making it suitable for military and aerospace systems. Saturation voltage is a maximum of 300mV at 100µA base current and 1mA collector current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 100µA, 1mA |
| Current - Collector Cutoff (Max) | 2nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 225 @ 10mA, 5V |
| Frequency - Transition | - |
| Supplier Device Package | TO-18 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Power - Max | 360 mW |
| Qualification | MIL-PRF-19500/376 |