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JAN2N2222AUBP/TR

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JAN2N2222AUBP/TR

SMALL-SIGNAL BJT

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

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Microchip Technology's JAN2N2222AUBP-TR is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This surface-mount device, packaged in a UB (3-SMD, No Lead) configuration, features a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. With a power dissipation rating of 500mW and a minimum DC current gain (hFE) of 100 at 150mA and 10V, it offers robust performance. The transistor exhibits a Vce(sat) of 1V at 50mA/500mA and a collector cutoff current of 50nA. Its wide operating temperature range of -65°C to 200°C (TJ) makes it suitable for demanding environments. This component finds utility in industrial automation, telecommunications, and consumer electronics sectors. The JAN2N2222AUBP-TR is supplied in Tape & Reel (TR) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case3-SMD, No Lead
Mounting TypeSurface Mount
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)50nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageUB
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max500 mW

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