JAN2N2222AUBP/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JAN2N2222AUBP-TR is an NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This surface-mount device, packaged in a UB (3-SMD, No Lead) configuration, features a collector-emitter breakdown voltage of 50V and a maximum collector current of 800mA. With a power dissipation rating of 500mW and a minimum DC current gain (hFE) of 100 at 150mA and 10V, it offers robust performance. The transistor exhibits a Vce(sat) of 1V at 50mA/500mA and a collector cutoff current of 50nA. Its wide operating temperature range of -65°C to 200°C (TJ) makes it suitable for demanding environments. This component finds utility in industrial automation, telecommunications, and consumer electronics sectors. The JAN2N2222AUBP-TR is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
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