JAN2N2222AUA
TRANS NPN 50V 0.8AManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology JAN2N2222AUA is a bipolar junction transistor (BJT) featuring an NPN configuration. This military-grade component offers a 50V collector-emitter breakdown voltage and a maximum collector current of 800mA. With a maximum power dissipation of 650mW, it is designed for surface mount applications within a 4-SMD package. The transistor exhibits a minimum DC current gain (hFE) of 100 at 150mA and 10V, and a saturation voltage (Vce) of 1V at 50mA and 500mA. Its operational temperature range spans from -65°C to 200°C. This component is qualified to MIL-PRF-19500/255, making it suitable for demanding applications in aerospace and defense industries.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 4-SMD |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 650 mW |
| Qualification | MIL-PRF-19500/255 |