JAN2N2221AUB/TR
SMALL-SIGNAL BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's JAN2N2221AUB-TR is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This surface-mount device, supplied in a UB package on tape and reel, offers a 50V collector-emitter breakdown voltage and a maximum collector current capability of 800mA. It features a minimum DC current gain (hFE) of 40 at 150mA and 10V, with a Vce(sat) of 1V at 50mA/500mA. With a maximum power dissipation of 500mW and an extended operating temperature range of -65°C to 200°C, this transistor meets MIL-PRF-19500/255 qualification for military-grade performance. It is suitable for use in aerospace, defense, and industrial control systems requiring robust small-signal amplification and switching.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 22 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 3-SMD, No Lead |
| Mounting Type | Surface Mount |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | UB |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 500 mW |
| Qualification | MIL-PRF-19500/255 |
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