JAN2N2219
TRANS NPN 30V 0.8A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N2219, an NPN Bipolar Junction Transistor (BJT), offers robust performance in a TO-39 (TO-205AD) metal can package. This military-grade component is qualified to MIL-PRF-19500/251, ensuring reliability for demanding applications. Key specifications include a maximum collector current (Ic) of 800 mA and a collector-emitter breakdown voltage (Vce(max)) of 30 V. The device exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. With a maximum power dissipation of 800 mW and an extended operating temperature range of -55°C to 200°C, the JAN2N2219 is suitable for use in aerospace, defense, and industrial control systems requiring high-temperature operation and stringent reliability standards. The saturation voltage (Vce(sat)) is a maximum of 1.6V at 50mA collector current and 50mA base current.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.6V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |