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JAN2N2219

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JAN2N2219

TRANS NPN 30V 0.8A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N2219, an NPN Bipolar Junction Transistor (BJT), offers robust performance in a TO-39 (TO-205AD) metal can package. This military-grade component is qualified to MIL-PRF-19500/251, ensuring reliability for demanding applications. Key specifications include a maximum collector current (Ic) of 800 mA and a collector-emitter breakdown voltage (Vce(max)) of 30 V. The device exhibits a minimum DC current gain (hFE) of 100 at 150 mA and 10 V. With a maximum power dissipation of 800 mW and an extended operating temperature range of -55°C to 200°C, the JAN2N2219 is suitable for use in aerospace, defense, and industrial control systems requiring high-temperature operation and stringent reliability standards. The saturation voltage (Vce(sat)) is a maximum of 1.6V at 50mA collector current and 50mA base current.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)30 V
Power - Max800 mW
QualificationMIL-PRF-19500/251

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