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JAN2N2218A

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JAN2N2218A

TRANS NPN 50V 0.8A TO39

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N2218A is an NPN bipolar junction transistor designed for robust performance. This military-grade component boasts a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA. With a maximum power dissipation of 800mW, it is suitable for applications requiring reliable power handling. The DC current gain (hFE) is a minimum of 40 at 150mA and 10V. Saturation voltage (Vce Sat) is a maximum of 1V at 50mA/500mA. This device features a TO-39 (TO-205AD) metal can package for through-hole mounting and operates across a wide temperature range from -55°C to 200°C. It meets MIL-PRF-19500/251 qualification standards, making it ideal for aerospace and defense applications.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseTO-205AD, TO-39-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 50mA, 500mA
Current - Collector Cutoff (Max)10nA
DC Current Gain (hFE) (Min) @ Ic, Vce40 @ 150mA, 10V
Frequency - Transition-
Supplier Device PackageTO-39 (TO-205AD)
GradeMilitary
Current - Collector (Ic) (Max)800 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max800 mW
QualificationMIL-PRF-19500/251

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