JAN2N2218A
TRANS NPN 50V 0.8A TO39Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N2218A is an NPN bipolar junction transistor designed for robust performance. This military-grade component boasts a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 800mA. With a maximum power dissipation of 800mW, it is suitable for applications requiring reliable power handling. The DC current gain (hFE) is a minimum of 40 at 150mA and 10V. Saturation voltage (Vce Sat) is a maximum of 1V at 50mA/500mA. This device features a TO-39 (TO-205AD) metal can package for through-hole mounting and operates across a wide temperature range from -55°C to 200°C. It meets MIL-PRF-19500/251 qualification standards, making it ideal for aerospace and defense applications.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-39 (TO-205AD) |
| Grade | Military |
| Current - Collector (Ic) (Max) | 800 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/251 |
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