JAN2N1711
TRANS NPN 30V 0.5A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N1711 is a military-grade NPN bipolar junction transistor (BJT) housed in a hermetically sealed TO-5 metal can package. This component is specified for operation with a collector-emitter breakdown voltage of 30V and a continuous collector current of up to 500mA. It features a maximum power dissipation of 800mW and a minimum DC current gain (hFE) of 100 at 150mA and 10V. The saturation voltage (Vce(sat)) is a maximum of 1.5V at 15mA base current and 150mA collector current. Designed for demanding applications, this transistor meets MIL-PRF-19500/225 qualification standards and operates across a wide temperature range of -65°C to 200°C. Its robust construction and performance characteristics make it suitable for use in aerospace and defense systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1.5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 30 V |
| Power - Max | 800 mW |
| Qualification | MIL-PRF-19500/225 |
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