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JAN2N1479

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JAN2N1479

TRANS NPN 40V 1.5A TO5

Manufacturer: Microchip Technology

Categories: Single Bipolar Transistors

Quality Control: Learn More

Microchip Technology JAN2N1479 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-S-19500/207, features a 40V collector-emitter breakdown voltage and a continuous collector current capability of 1.5A. With a maximum power dissipation of 1W and a minimum DC current gain (hFE) of 20 at 200mA and 4V, the JAN2N1479 offers robust performance in its TO-5, TO-205AA metal can package. It is suitable for use in aerospace, defense, and industrial systems requiring dependable switching and amplification. The device exhibits a saturation voltage (Vce Sat) of 750mV at 20mA base current and 200mA collector current, with a low collector cutoff current of 5µA (ICBO). It operates across a wide temperature range from -65°C to 200°C.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-205AA, TO-5-3 Metal Can
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature-65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic750mV @ 20mA, 200mA
Current - Collector Cutoff (Max)5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce20 @ 200mA, 4V
Frequency - Transition-
Supplier Device PackageTO-5
GradeMilitary
Current - Collector (Ic) (Max)1.5 A
Voltage - Collector Emitter Breakdown (Max)40 V
Power - Max1 W
QualificationMIL-S-19500/207

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