JAN2N1479
TRANS NPN 40V 1.5A TO5Manufacturer: Microchip Technology
Categories: Single Bipolar Transistors
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Microchip Technology JAN2N1479 is a high-reliability NPN bipolar junction transistor (BJT) designed for demanding applications. This military-grade component, qualified to MIL-S-19500/207, features a 40V collector-emitter breakdown voltage and a continuous collector current capability of 1.5A. With a maximum power dissipation of 1W and a minimum DC current gain (hFE) of 20 at 200mA and 4V, the JAN2N1479 offers robust performance in its TO-5, TO-205AA metal can package. It is suitable for use in aerospace, defense, and industrial systems requiring dependable switching and amplification. The device exhibits a saturation voltage (Vce Sat) of 750mV at 20mA base current and 200mA collector current, with a low collector cutoff current of 5µA (ICBO). It operates across a wide temperature range from -65°C to 200°C.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: DiscontinuedPackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-205AA, TO-5-3 Metal Can |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 20mA, 200mA |
| Current - Collector Cutoff (Max) | 5µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 200mA, 4V |
| Frequency - Transition | - |
| Supplier Device Package | TO-5 |
| Grade | Military |
| Current - Collector (Ic) (Max) | 1.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 1 W |
| Qualification | MIL-S-19500/207 |
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