2N7377
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N7377 is a high-performance PNP bipolar junction transistor (BJT) designed for demanding power applications. This through-hole component, housed in a TO-254AA package, offers a robust 300V collector-emitter breakdown voltage and a continuous collector current capability of up to 5A. With a maximum power dissipation of 58W, it is well-suited for power switching and amplification circuits across various industrial sectors, including aerospace, defense, and industrial automation. The device operates reliably over an extended temperature range of -65°C to 200°C (TJ).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-254AA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Power - Max | 58 W |
Request a Quote
Clients Also Buy
2N3780
POWER BJT
2N2481
NPN TRANSISTOR
JANTX2N6353
TRANS NPN DARL 150V 5A TO66
