2N7376
POWER BJTManufacturer: Microchip Technology
Categories: Single Bipolar Transistors
Quality Control: Learn More
Microchip Technology's 2N7376 is a high-power PNP bipolar junction transistor (BJT) designed for demanding applications. This component features a 200 V collector-emitter breakdown voltage and a continuous collector current capability of 5 A, with a maximum power dissipation of 58 W. The transistor is housed in a TO-254AA package, facilitating through-hole mounting. Its robust construction and operational temperature range of -65°C to 200°C make it suitable for use in industrial control systems, power supply units, and automotive electronics where reliable high-power switching is critical.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 36 week(s)Product Status: ActivePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-254-3, TO-254AA |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | - |
| Frequency - Transition | - |
| Supplier Device Package | TO-254AA |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 200 V |
| Power - Max | 58 W |
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